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Aluminum Nitride Substrate Cermaic & DPC Metallized AlN for Power Modules Application

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Leading Electronic Material Science & Technology Co., Ltd.
[China]

Address
No.6, S. Haiyang Rd., Rugao Nantong Jiangsu
Phone
86-1586-1406069
Contact name
Jason Xu

Quick Information

  • Place of Origin: China
  • Material : Aluminum Nitride
  • Type : Dielectric Ceramics

Description

High Thermal Conductivity Aluminum Nitride AlN Substrates 
170 W/mK - 200 W/mK


Aluminum Nitride substrate material with its excellent ability to dissipate heat up to 200 W/mK, is the answer to the present trend 
toward miniaturization of high power microelectronic circuits and other high thermal hazard-free applications.
Leading Tech produce AlN substrates and AlN wafers with thermal conductivity of ~175 W/mK and ~200 W/mK to meet
a variety of specification requirements.

For New Stock Items below:
  • Surface Finishes:
       AF = As Fired
       LBS = Lapped Both Sides (25u" Ra)
       PBS = Polished Both Sides (2u" Ra)
       P1S = Polished 1 Side (2u" Ra) / 2nd Side Lapped
  • Improved tolerances, surface finishes and alternate sizes are also available.


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